Produttore elettronici |
Il numero della parte |
Scheda tecnica Date Size |
Spiegazioni elettronici |
Rohs Pb Free Lifecycle |
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NXP Semiconductors
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BAS101
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DIODE 0.2 A, 300 V, SILICON, SIGNAL DIODE, PLASTIC, SMD, 3 PIN, Signal Diode
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compliant yes transferred |
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BAS101,215
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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compliant
transferred |
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Nexperia
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BAS101,215
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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active |
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BAS101,215
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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active |
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NXP Semiconductors
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BAS101/T1R
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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transferred |
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Nexperia
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BAS101/T1R
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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obsolete |
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BAS101/T1R
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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obsolete |
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NXP Semiconductors
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BAS101S
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DIODE 0.1 A, 600 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, 3 PIN, Signal Diode
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compliant yes transferred |
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BAS101S,215
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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compliant
transferred |
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Nexperia
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BAS101S,215
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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active |
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BAS101S,215
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BAS101; BAS101S - High-voltage switching diodes TO-236 3-Pin
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active |
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NXP Semiconductors
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BAS116 T/R
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Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 215 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
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compliant no active |
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BAS116,215
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BAS116 - Low-leakage diode TO-236 3-Pin
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compliant
transferred |
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Nexperia
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BAS116,215
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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BAS116,215
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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NXP Semiconductors
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BAS116,235
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BAS116 - Low-leakage diode TO-236 3-Pin
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compliant
transferred |
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Nexperia
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BAS116,235
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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BAS116,235
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BAS116 - Low-leakage diode TO-236 3-Pin
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active |
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NXP Semiconductors
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BAS116GWJ
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BAS116GW - Low leakage switching diode
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transferred |
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Nexperia
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BAS116GWJ
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BAS116GW - Low leakage switching diode
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active |
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